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2SB1462 - Silicon PNP epitaxial planer type Transistor

Key Features

  • q q 0.4 0.8±0.1 0.4 High foward current transfer ratio hFE. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) 1.6±0.1 1.0±0.1 0.5 1 0.5 3 2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC.

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Datasheet Details

Part number 2SB1462
Manufacturer Panasonic
File Size 41.26 KB
Description Silicon PNP epitaxial planer type Transistor
Datasheet download datasheet 2SB1462 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistor 2SB1462 Silicon PNP epitaxial planer type For general amplification Complementary to 2SD2216 1.6±0.15 Unit: mm s Features q q 0.4 0.8±0.1 0.4 High foward current transfer ratio hFE. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) 1.6±0.1 1.0±0.1 0.5 1 0.5 3 2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 0.45±0.1 0.3 0.75±0.