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2SB1463 - Silicon PNP epitaxial planer type Transistor

Key Features

  • q q q 0.4 0.8±0.1 0.4 High collector to emitter voltage VCEO. Low noise voltage NV. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) Ratings.
  • 150.
  • 150.
  • 5.
  • 100.
  • 50 125 125.
  • 55 ~ +125 Unit V V V mA mA mW ˚C ˚C 1.6±0.1 1.0±0.1 0.5 1 0.5 3 2 0.45±0.1 0.3 0.75±0.15 Parameter Collector to base voltage Collector to emitter voltage Emitter to base v.

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Datasheet Details

Part number 2SB1463
Manufacturer Panasonic
File Size 36.48 KB
Description Silicon PNP epitaxial planer type Transistor
Datasheet download datasheet 2SB1463 Datasheet

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Transistor 2SB1463 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD2240 1.6±0.15 Unit: mm s Features q q q 0.4 0.8±0.1 0.4 High collector to emitter voltage VCEO. Low noise voltage NV. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) Ratings –150 –150 –5 –100 –50 125 125 –55 ~ +125 Unit V V V mA mA mW ˚C ˚C 1.6±0.1 1.0±0.1 0.5 1 0.5 3 2 0.45±0.1 0.3 0.75±0.