2SB1592 - Silicon PNP epitaxial planer type Transistor
Panasonic
Key Features
0.45.
0.1
+0.15
2.3±0.2
1:Emitter 2:Collector 3:Base TO.
92NL Package
are shot pulse of ≤1ms width
s Electrical Characteristics
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25˚C)
Symbol VCBO VCEO VEBO hFE.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Transistor
2SB1592
Silicon PNP epitaxial planer type
For low-frequency amplification
Unit: mm
5.0±0.2 4.0±0.2
q q
Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
* Applied
(Ta=25˚C)
Ratings –30 –25 –11 –10 –3 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C
1 2 3 2.54±0.15 1.27 0.45 –0.1 1.27
Symbol VCBO VCEO VEBO ICP* IC PC Tj Tstg
+0.15
13.5±0.5
0.7±0.1
0.7±0.2
8.0±0.2
s Features
0.45 –0.1
+0.15
2.3±0.
2SB1592 Datasheet
