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Transistors
2SC2631
Silicon NPN epitaxial planar type
For low-frequency high breakdown voltage amplification Complementary to 2SA1123
5.0±0.2
Unit: mm 4.0±0.2
5.1±0.2
■ Features
• Satisfactory linearity of forward current transfer ratio hFE
• High collector-emitter voltage (Base open) VCEO
• Small collector output capacitance (Common base, input open cir-
0.7±0.1
cuited) Cob
0.7±0.2 12.9±0.5
/ ■ Absolute Maximum Ratings Ta = 25°C
e Parameter
Symbol Rating
Unit
c type) Collector-base voltage (Emitter open) VCBO
150
V
n d ge. ed Collector-emitter voltage (Base open) VCEO
150
2.3±0.
2SC2631 Datasheet
