Datasheet Summary
Transistors
Silicon NPN epitaxial planar type
For low-frequency high breakdown voltage amplification plementary to 2SA1124
5.9±0.2
Unit: mm
4.9±0.2
8.6±0.2
- Features
- Satisfactory linearity of forward current transfer ratio hFE
13.5±0.5 0.7- +00..23
- High collector-emitter voltage (Base open) VCEO
0.7±0.1
- Small collector output capacitance (mon base, input open cir- cuited) Cob
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