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2SC2632 Datasheet Silicon NPN Transistor

Manufacturer: Panasonic

Overview: Transistors 2SC2632 Silicon NPN epitaxial planar type For low-frequency high breakdown voltage amplification plementary to 2SA1124 5.9±0.2 Unit: mm 4.9±0.2 8.6±0.

Key Features

  • Satisfactory linearity of forward current transfer ratio hFE 13.5±0.5 0.7.
  • +00..23.
  • High collector-emitter voltage (Base open) VCEO 0.7±0.1.
  • Small collector output capacitance (Common base, input open cir- cuited) Cob /.
  • Absolute Maximum Ratings Ta = 25°C e Parameter Symbol Rating Unit c type) Collector-base voltage (Emitter open) VCBO 150 V n d ge. ed Collector-emitter voltage (Base open) VCEO 150 (3.2) V sta tinu Emitter-base voltage (Co.

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