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Transistors
2SC2634
Silicon NPN epitaxial planar type
For low-frequency and low-noise amplification Complementary to 2SA1127
5.0±0.2
Unit: mm 4.0±0.2
5.1±0.2
■ Features
• Low noise voltage NV
• High forward current transfer ratio hFE
0.7±0.1
■ Absolute Maximum Ratings Ta = 25°C
0.7±0.2 12.9±0.5
/ Parameter
Symbol Rating
Unit
e ) Collector-base voltage (Emitter open) VCBO
60
V
c type Collector-emitter voltage (Base open) VCEO
55
V
n d ge. ed Emitter-base voltage (Collector open) VEBO
7
2.3±0.2
V
le sta ntinu Collector current
IC
100
mA
a e cyc isco Peak collector current
ICP
200
mA
life d, d Collector power dissipation
PC
400
mW
n u duct type Junction temperature
Tj
150
°C
te tin Pro ued Storage temperature
Tstg −55 to +150 °C
0.45+–00..115 2.5+–00.
2SC2634 Datasheet
