q q q
Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. (Ta=25˚C)
1 2 3
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings 150 150 5 100 50 300 150.
55 ~ +150
Unit V V V mA mA mW ˚C ˚C
1:Emitter 2:C.
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Transistor
2SC4715
Silicon NPN epitaxial planer type
For low-frequency high breakdown voltage amplification
4.0±0.2
3.0±0.2
Unit: mm
s Features
q q q
Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob.
(Ta=25˚C)
1 2 3
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings 150 150 5 100 50 300 150 –55 ~ +150
Unit V V V mA mA mW ˚C ˚C
1:Emitter 2:Collector 3:Base EIAJ:SC–72 New S Type Package
1.27 1.27 2.54±0.
2SC4715 Datasheet
