Datasheet Summary
Power Transistors
Silicon NPN triple diffusion planar type
For power switching
Unit: mm s Features
13.0±0.2 4.2±0.2
5.0±0.1 10.0±0.2 1.0 q q q q
High-speed switching High collector to base voltage VCBO Satisfactory linearity of foward current transfer ratio hFE Allowing supply with the radial taping (TC=25˚C)
Ratings 900 900 800 7 2 1 0.3 15 2 150
- 55 to +150 Unit V V V V A A A W ˚C ˚C
90°
2.5±0.2
1.2±0.1
C1.0 2.25±0.2
18.0±0.5 Solder Dip s...