q q q
15.0±0.5
9.9±0.3
3.0±0.5
4.6±0.2 2.9±0.2
High-speed switching High collector to base voltage VCBO Low collector to emitter saturation voltage VCE(sat)
φ3.2±0.1
13.7±0.2 4.2±0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO ICP IC PC Tj Tstg
(TC=25˚C)
Ratings 1000 500 10 5 40 2 150.
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Power Transistors
2SC4898
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
s Features
q q q
15.0±0.5
9.9±0.3
3.0±0.5
4.6±0.2 2.9±0.2
High-speed switching High collector to base voltage VCBO Low collector to emitter saturation voltage VCE(sat)
φ3.2±0.1
13.7±0.2 4.2±0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO ICP IC PC Tj Tstg
(TC=25˚C)
Ratings 1000 500 10 5 40 2 150 –55 to +150 Unit V V A A W ˚C ˚C
1.4±0.2 1.6±0.2 0.8±0.1 2.54±0.3 3 5.08±0.5
2.6±0.1
0.55±0.
2SC4898 Datasheet
