The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Transistor
2SC5190
Silicon NPN epitaxial planer type
For low-voltage high-frequency amplification
Unit: mm
s Features
q q q
2.1±0.1 0.425 1.25±0.1 0.425
High transition frequency fT. Small collector output capacitance Cob. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
0.65
1
2.0±0.2
1.3±0.1
0.65
3
2
0.9±0.1
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Ratings 9 6 2 30 150 150 –55 ~ +150
Unit V V V mA mW ˚C ˚C
0.7±0.1
0 to 0.1
0.2±0.