Overview: Power Transistors 2SC5223
Silicon NPN triple diffusion planar type
Unit: mm For high-speed switching
7.3± 0.1 1.8± 0.1 6.5± 0.1 5.3± 0.1 4.35± 0.1 2.3± 0.1 0.5± 0.1 2.5± 0.1 0.8max 0.93±0.1 1.0± 0.1 0.1± 0.05 0.5± 0.1 q q High collector to base voltage VCBO High collector to emitter VCEO 0.75± 0.1 2.3± 0.1 4.6± 0.1 s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (TC=25°C) Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C)
Ratings 500 500 7 2.0 1.0 10 150 –55 to +150 Unit V V V A A
2.3 1 2 3 1:Base 2:Collector 3:Emitter U Type Package Unit: mm 6.5±0.2 5.35 4.35
1.8 0.75 2.3 W ˚C ˚C
1 2 3 0.6 0.5±0.1
2.3±0.1 s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage (Ta=25˚C)
Symbol ICBO IEBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) Conditions VCB = 400V, IE = 0 VEB = 5V, IC = 0 IC = 100µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 5V, IC = 50mA VCE = 5V, IC = 330mA IC = 330mA, IB = 33mA IC = 330mA, IB = 33mA 500 500 7 100 100 min typ 1:Base 2:Collector 3:Emitter EIAJ:SC–63 U Type Package (Z) max 100 10 6.0 5.5±0.2 13.3±0.3 1.0± 0.
