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2SC5346 - NPN TRANSISTOR

Datasheet Summary

Features

  • q q q Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. 0.65 max. 1.0 1.0 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature.
  • 1 (Ta=25˚C) Ratings 150 150 5 100 50 1.0 150.
  • 55 ~ +150 1cm2 Unit V V V mA mA W ˚C ˚C.

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Datasheet Details

Part number 2SC5346
Manufacturer Panasonic Semiconductor
File Size 36.98 KB
Description NPN TRANSISTOR
Datasheet download datasheet 2SC5346 Datasheet
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Transistor 2SC5346 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SA1982 6.9±0.1 0.15 Unit: mm 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.45–0.05 2.5±0.1 0.7 4.0 s Features q q q Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. 0.65 max. 1.0 1.0 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature *1 (Ta=25˚C) Ratings 150 150 5 100 50 1.0 150 –55 ~ +150 1cm2 Unit V V V mA mA W ˚C ˚C 0.45–0.05 +0.1 +0.1 2.5±0.5 2.5±0.
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