Datasheet Summary
Power Transistors
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
- Features
15.5±0.5 φ 3.2±0.1 5˚
3.0±0.3 5˚
(4.5)
26.5±0.5 (2.0)
(1.2) (10.0)
(23.4) 22.0±0.5
- High breakdown voltage: 1 700 V; supporting a large screen CRT and wider visible angle
- High-speed switching: Fall time tf < 0.2 µs
- Low collector-emitter saturation voltage: Collector-emitter satura- tion voltage VCE(sat) < 3 V
- Wide safe operation area
5˚
(4.0)
5˚
2.0±0.2
5˚
1.1±0.1
0.7±0.1
18.6±0.5 (2.0)
Solder Dip
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