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2SC5591 - NPN Transistor

Key Features

  • s 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5.
  • High breakdown voltage: 1 700 V; supporting a large screen CRT and wider visible angle.
  • High-speed switching: Fall time tf < 0.2 µs.
  • Low collector-emitter saturation voltage: Collector-emitter satura- tion voltage VCE(sat) < 3 V.
  • Wide safe operation area 5˚ (4.0) 5˚ 2.0±0.2 5˚ 1.1±0.1 0.7±0.1 18.6±0.5 (2.0) Solder Dip /.
  • Absolute Maximum Ratings TC = 25°.

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Full PDF Text Transcription (Reference)

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Power Transistors 2SC5591 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm ■ Features 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage: 1 700 V; supporting a large screen CRT and wider visible angle • High-speed switching: Fall time tf < 0.2 µs • Low collector-emitter saturation voltage: Collector-emitter satura- tion voltage VCE(sat) < 3 V • Wide safe operation area 5˚ (4.0) 5˚ 2.0±0.2 5˚ 1.1±0.1 0.7±0.1 18.6±0.5 (2.0) Solder Dip / ■ Absolute Maximum Ratings TC = 25°C e e) Parameter Symbol Rating Unit c e. d typ Collector-base voltage (Emitter open) VCBO 1 700 3.3±0.3 5.5±0.3 V n d stag tinue Collector-emitter voltage (E-B short) VCES 1 700 (2.