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2SC5592 - NPN Transistor

Key Features

  • s 1.50.
  • +00..0255 2.8.
  • +00..32.
  • Low collector-emitter saturation voltage VCE(sat) 0.4±0.2.
  • High-speed switching.
  • Mini type package, allowing downsizing of the equipment and 1 2 automatic insertion through the tape packing (0.95) (0.95) 5˚ (0.65) 1.9±0.1 /.
  • Absolute Maximum Ratings Ta = 25°C 2.90+.
  • 00..0250 10˚ e Parameter Symbol Rating Unit c type) Collector-base voltage (Emitter open) VCBO 15 V n d ge. ed Collector-emitte.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistors This product complies with the RoHS Directive (EU 2002/95/EC). 2SC5592 Silicon NPN epitaxial planar type For DC-DC converter Unit: mm For various driver circuits 0.40+–00..0150 0.16+–00..0160 3 ■ Features 1.50–+00..0255 2.8–+00..32 • Low collector-emitter saturation voltage VCE(sat) 0.4±0.2 • High-speed switching • Mini type package, allowing downsizing of the equipment and 1 2 automatic insertion through the tape packing (0.95) (0.95) 5˚ (0.65) 1.9±0.1 / ■ Absolute Maximum Ratings Ta = 25°C 2.90+–00..0250 10˚ e Parameter Symbol Rating Unit c type) Collector-base voltage (Emitter open) VCBO 15 V n d ge. ed Collector-emitter voltage (Base open) VCEO 15 0 to 0.1 1.1–+00..12 1.1–+00..