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2SC5597 - NPN TRANSISTOR

Key Features

  • I Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Collector to emitter voltage Symbol VCBO VCES VCEO Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25°C Ta = 25°C Tj Tstg VEBO ICP IC IB PC Rating 1 700 1 700 600 7 30 22 11 200 3.5 150.
  • 55 to +150 °C °C Unit V V V V A A A W (1.5) 1: Base 2: Collector 3: Emitter TOP-3L Package Marking Symbol: C5597 Internal Connection C B Junction temperature Storag.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistors 2SC5597 Silicon NPN triple diffusion mesa type Unit: mm For horizontal deflection output (10.0) (6.0) (2.0) (4.0) 20.0±0.5 φ 3.3±0.2 5.0±0.3 (3.0) 20.0±0.5 (2.5) Solder Dip • High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide area of safe operation (ASO) 26.0±0.5 (3.0) (1.5) 2.0±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 10.9±0.5 (1.5) 2.7±0.3 1 2 3 I Features I Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Collector to emitter voltage Symbol VCBO VCES VCEO Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25°C Ta = 25°C Tj Tstg VEBO ICP IC IB PC Rating 1 700 1 700 600 7 30 22 11 200 3.