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2SC5809 - Silicon NPN Transistor

Key Features

  • s.
  • High-speed switching (Fall time tf is short).
  • High collector-base voltage (Emitter open) VCBO.
  • Low collector-emitter saturation voltage VCE(sat).
  • TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 13.7±0.2 4.2±0.2 Solder Dip 15.0±0.5 φ 3.2±0.1 1.4±0.2 1.6±0.2 0.8±0.1 2.6±0.1 0.55±0.15.
  • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter vol.

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Power Transistors 2SC5809 Silicon NPN triple diffusion planar type Unit: mm For high breakdown voltage high-speed switching ■ Features • High-speed switching (Fall time tf is short) • High collector-base voltage (Emitter open) VCBO • Low collector-emitter saturation voltage VCE(sat) • TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 13.7±0.2 4.2±0.2 Solder Dip 15.0±0.5 φ 3.2±0.1 1.4±0.2 1.6±0.2 0.8±0.1 2.6±0.1 0.55±0.