Datasheet Summary
Power Transistors
Silicon NPN triple diffusion planar type
Unit: mm
For high breakdown voltage high-speed switching
- Features
- High-speed switching (Fall time tf is short)
- High collector-base voltage (Emitter open) VCBO
- Low collector-emitter saturation voltage VCE(sat)
- TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed
9.9±0.3
3.0±0.5
4.6±0.2 2.9±0.2
13.7±0.2 4.2±0.2 Solder Dip
15.0±0.5
φ 3.2±0.1
1.4±0.2 1.6±0.2 0.8±0.1
2.6±0.1
0.55±0.15
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