2SC5809 Overview
Power Transistors 2SC5809 Silicon NPN triple diffusion planar type Unit: mm For high breakdown voltage high-speed switching.
2SC5809 Key Features
- High-speed switching (Fall time tf is short)
- High collector-base voltage (Emitter open) VCBO
- Low collector-emitter saturation voltage VCE(sat)
- TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed