2SC5829 - Silicon NPN epitaxial planar type Transistor
Panasonic
Key Features
s.
Allowing the small current and low voltage operation.
High transition frequency fT.
Suitable for high-density mounting and downsizing of the equipment for Ultraminiature leadless package 0.6 mm × 1.0 mm (height 0.39 mm)
0.60±0.05
3 2
Unit: mm
1 1.00±0.05
0.39+0.01.
0.03
0.25±0.05
0.25±0.05 1
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissi.
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Transistors
2SC5829
Silicon NPN epitaxial planar type
For high speed switching ■ Features
• Allowing the small current and low voltage operation • High transition frequency fT • Suitable for high-density mounting and downsizing of the equipment for Ultraminiature leadless package 0.6 mm × 1.0 mm (height 0.39 mm)
0.60±0.05
3 2
Unit: mm
1 1.00±0.05
0.39+0.01 −0.03
0.25±0.05
0.25±0.05 1
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Rating 10 7 2 10 50 150 −55 to +150
Unit V V V mA mW °C °C
0.50±0.05
■ Absolute Maximum Ratings Ta = 25°C
3
0.65±0.01
2 0.05±0.
2SC5829 Datasheet
