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2SC5839 - Silicon NPN Transistor

Datasheet Summary

Features

  • s.
  • High transition frequency fT.
  • Suitable for high-density mounting and downsizing of the equipment for Ultraminiature leadless package 0.6 mm × 1.0 mm (height 0.39 mm) www. DataSheet4U. com Unit: mm 1 1.00±0.05 0.60±0.05 3 2 0.39+0.01.
  • 0.03 0.15±0.05 0.05±0.03 0.35±0.01 0.25±0.05 0.50±0.05 0.25±0.05 1.
  • Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector ope.

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Datasheet Details

Part number 2SC5839
Manufacturer Panasonic Semiconductor
File Size 93.71 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SC5839 Datasheet
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Full PDF Text Transcription

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Transistors 2SC5839 Silicon NPN epitaxial planar type For low-voltage high-frequency amplification ■ Features • High transition frequency fT • Suitable for high-density mounting and downsizing of the equipment for Ultraminiature leadless package 0.6 mm × 1.0 mm (height 0.39 mm) www.DataSheet4U.com Unit: mm 1 1.00±0.05 0.60±0.05 3 2 0.39+0.01 −0.03 0.15±0.05 0.05±0.03 0.35±0.01 0.25±0.05 0.50±0.05 0.25±0.05 1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 9 6 2 30 100 125 −55 to +125 Unit V V V mA mW °C °C 3 0.65±0.01 2 0.05±0.
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