Datasheet Summary
Power Transistors
Silicon NPN triple diffusion planar type
Unit: mm
4.2±0.2
For power amplification
- Features
- High forward current transfer ratio hFE which has satisfactory linearity.
- Low collector-emitter saturation voltage VCE(sat)
- Allowing supply with the radial taping
10.0±0.2
1.0±0.2
90˚ 2.5±0.1
5.0±0.1
13.0±0.2
1.2±0.1 1.48±0.2
C 1.0 2.25±0.2
-...