2SC5926 - Silicon NPN triple diffusion planar type Transistor
Panasonic
Key Features
High forward current transfer ratio hFE which has satisfactory linearity.
Low collector-emitter saturation voltage VCE(sat).
Allowing supply with the radial taping
10.0±0.2
1.0±0.2
90˚ 2.5±0.1
5.0±0.1
13.0±0.2
1.2±0.1 1.48±0.2
C 1.0 2.25±0.2.
Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power.
Silicon NPN triple diffusion mesa type Power Transistor
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Power Transistors
2SC5926
Silicon NPN triple diffusion planar type
Unit: mm
4.2±0.2
For power amplification ■ Features
• High forward current transfer ratio hFE which has satisfactory linearity. • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping
10.0±0.2
1.0±0.2
90˚ 2.5±0.1
5.0±0.1
13.0±0.2
1.2±0.1 1.48±0.2
C 1.0 2.25±0.2
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating 80 60 6 3 6 15 2.0 150 −55 to +150 °C °C Unit V V V A A W
18.0±0.5 Solder Dip
0.65±0.1 0.65±0.
2SC5926 Datasheet
