Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation.
Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 60 50 5 1 1.5 1 150.
55 to +150 cm2 Unit V V V A A W °C °C
1.0±0.1
(0.85)
3 (2.5)
2 (2.5)
1.25±0.05
0.55±0.1
1: Base 2: Collector 3: Emitter.
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Transistors
2SD0973A (2SD973A)
Silicon NPN epitaxial planar type
For low-frequency driver amplification
6.9±0.1
Unit: mm
2.5±0.1 (1.0)
(0.4)
2.0±0.2
• Low collector-emitter saturation voltage VCE(sat) • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
(1.5)
3.5±0.1
(1.0) 2.4±0.2
0.45±0.05 1
■ Features
(1.5)
R 0.9 R 0.7
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation * Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 60 50 5 1 1.