q q
1.5
0.4
1.5 R0.9 R0.9
0.85
0.55±0.1
0.45±0.05
1.25±0.05
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature.
(Ta=25˚C)
Ratings 40 20 7 8 5 1 150.
55 ~ +150 1cm2 Unit V
3
2
1
Symbol VCBO VCEO VEBO ICP IC PC.
Tj Tstg
2.5
2.5
V V A A W ˚C ˚C
1:Base 2:Collector 3:Emitter
EIAJ:SC.
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Transistor
2SD1244
Silicon NPN epitaxial planer type
For low-frequency power amplification
Unit: mm
6.9±0.1 2.5±0.1 1.0
1.0 2.4±0.2 2.0±0.2 3.5±0.1
s Features
q q
1.5
0.4
1.5 R0.9 R0.9
0.85
0.55±0.1
0.45±0.05
1.25±0.05
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
(Ta=25˚C)
Ratings 40 20 7 8 5 1 150 –55 ~ +150 1cm2 Unit V
3
2
1
Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg
2.5
2.5
V V A A W ˚C ˚C
1:Base 2:Collector 3:Emitter
EIAJ:SC–71 M Type Mold Package
Printed circuit board: Copper foil area of thickness of 1.
2SD1244 Datasheet
