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2SD1820 - Silicon NPN epitaxial planer type Transistor

Key Features

  • q q 2.0±0.2 1.3±0.1 2.1±0.1 0.425 1.25±0.1 0.425 0.65 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) Ratings 30 60 25 50 5 1 500 150 150.
  • 55 ~ +150 Unit 0.65 1 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1820 2SD1820A 2SD1820 VCEO VEBO ICP IC PC Tj Tstg VCBO Symbol 2 0.2 0.9±0.1 0.7±0.1 V em.

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Datasheet Details

Part number 2SD1820
Manufacturer Panasonic
File Size 39.46 KB
Description Silicon NPN epitaxial planer type Transistor
Datasheet download datasheet 2SD1820 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistor 2SD1820, 2SD1820A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1219 and 2SB1219A Unit: mm s Features q q 2.0±0.2 1.3±0.1 2.1±0.1 0.425 1.25±0.1 0.425 0.65 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) Ratings 30 60 25 50 5 1 500 150 150 –55 ~ +150 Unit 0.65 1 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1820 2SD1820A 2SD1820 VCEO VEBO ICP IC PC Tj Tstg VCBO Symbol 2 0.2 0.9±0.1 0.7±0.