Datasheet Summary
Power Transistors
Silicon NPN epitaxial planar type
For power switching
Unit: mm
0.7±0.1 s Features q q q q
10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1
4.2±0.2
Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 130 80 7 25 15 50 2 150
- 55 to +150 Unit V V V A A W ˚C ˚C
Solder Dip
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage...