q q q q
10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1
4.2±0.2
Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 130 80 7 25 15 50 2 150.
55 to +150 Unit V V V A A W ˚C ˚C
Solder Dip
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collecto.
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Power Transistors
2SD1964
Silicon NPN epitaxial planar type
For power switching
Unit: mm
0.7±0.1
s Features
q q q q
10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1
4.2±0.2
Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 130 80 7 25 15 50 2 150 –55 to +150 Unit V V V A A W ˚C ˚C
Solder Dip
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
14.0±0.5
4.0
s Absolute Maximum Ratings
16.7±0.3
7.5±0.
2SD1964 Datasheet
