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2SD1975A - Silicon NPN Transistor

Key Features

  • q q q q Satisfactory foward current transfer ratio hFE collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Optimum for the output stage of a HiFi audio amplifier (TC=25˚C) Ratings 180 200 180 200 5 25 15 150 3.5 150.
  • 55 to +150 Unit V 26.0±0.5 10.0 1.5 2.0 4.0 1.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1975 2SD1975A 2SD1975 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 20.0±0.5 2.5 2.0.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistors 2SD1975, 2SD1975A Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1317 and 2SB1317A 20.0±0.5 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 6.0 s Features q q q q Satisfactory foward current transfer ratio hFE collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Optimum for the output stage of a HiFi audio amplifier (TC=25˚C) Ratings 180 200 180 200 5 25 15 150 3.5 150 –55 to +150 Unit V 26.0±0.5 10.0 1.5 2.0 4.0 1.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1975 2SD1975A 2SD1975 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 20.0±0.5 2.5 2.0±0.3 3.0±0.3 1.0±0.2 2.7±0.3 0.6±0.2 5.45±0.3 10.9±0.