Datasheet4U Logo Datasheet4U.com

2SD1979 - Silicon NPN Transistor

Key Features

  • Unit µA µA V 20 500 2500 0.1 0.6 80 4.5 1.0 V V MHz pF Ω FE Rank classification Rank hFE S 500 ~ 1500 3WS T 800 ~ 2500 3WT Measurement circuit 1kΩ IB=1mA f=1kHz V=0.3V Marking Symbol VB VV VA Ron= VB !1000(Ω) VA.
  • VB 1 Transistor PC.
  • Ta 240 24 Ta=25˚C 200 20 100 2SD1979 IC.
  • VCE 120 VCE=2V 25˚C Ta=75˚C.
  • 25˚C IC.
  • VBE Collector power dissipation PC (mW) Collector current IC (mA) 160 16 9µA 8µA 7µA 6µA 5µA 4µA 3µA 2µA 1µA Base current I.

📥 Download Datasheet

Datasheet Details

Part number 2SD1979
Manufacturer Panasonic
File Size 37.77 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD1979 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD1970 Silicon NPN Transistor Hitachi Semiconductor
2SD1974 Silicon NPN Transistor Hitachi Semiconductor
2SD1975 SILICON POWER TRANSISTOR SavantIC
2SD1975 NPN Transistor INCHANGE
2SD1975A SILICON POWER TRANSISTOR SavantIC

Other Datasheets by Panasonic

Part Number Description
2SD1975 Silicon NPN Transistor
2SD1975A Silicon NPN Transistor
2SD1934 Silicon NPN epitaxial planer type Transistor
2SD1938 Silicon NPN epitaxial planar type Transistor
2SD1938F Silicon NPN epitaxial planar type Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Transistor 2SD1979 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter 2.1±0.1 0.425 1.25±0.1 0.425 Unit: mm 0.65 q q q Low ON resistance Ron. High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) Ratings 50 20 25 500 300 150 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 1 2.0±0.2 1.3±0.1 0.65 3 2 0.9±0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 0.7±0.1 0 to 0.1 0.2±0.