Overview: Transistor 2SD1979
Silicon NPN epitaxial planer type
For low-voltage output amplification For muting For DC-DC converter
2.1±0.1 0.425 1.25±0.1 0.425 Unit: mm 0.65 q q q Low ON resistance Ron. High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C)
Ratings 50 20 25 500 300 150 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 1 2.0±0.2 1.3±0.1 0.65 3 2 0.9±0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 0.7±0.1 0 to 0.1 0.2±0.1 1:Base 2:Emitter 3:Collector EIAJ:SC–70 S–Mini Type Package Marking symbol : 3W s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Collector output capacitance ON resistanse
*1h (Ta=25˚C)
Symbol ICBO IEBO VCEO hFE*1 VCE(sat) VBE fT Cob Ron*2
*2R on Conditions VCB = 50V, IE = 0 VEB = 25V, IC = 0 IC = 1mA, IB = 0 VCE = 2V, IC = 4mA IC = 30mA, IB = 3mA VCE = 2V, IC = 4mA VCB = 6V, IE = –4mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min typ max 1 1 0.15–0.05 s Absolute Maximum Ratings 0.2 +0.1 0.3–0 +0.
