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Power Transistors
2SD1975, 2SD1975A
Silicon NPN triple diffusion planar type
For high power amplification Complementary to 2SB1317 and 2SB1317A
20.0±0.5
Unit: mm
φ 3.3±0.2 5.0±0.3 3.0
6.0
s Features
q q q q
Satisfactory foward current transfer ratio hFE collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Optimum for the output stage of a HiFi audio amplifier (TC=25˚C)
Ratings 180 200 180 200 5 25 15 150 3.5 150 –55 to +150 Unit V
26.0±0.5
10.0
1.5
2.0
4.0
1.5
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1975 2SD1975A 2SD1975 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
20.0±0.5 2.5
2.0±0.3 3.0±0.3 1.0±0.2
2.7±0.3
0.6±0.2 5.45±0.3 10.9±0.
2SD1975 Datasheet
