2SD2136 Overview
Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification plementary to 2SB1416 7.5±0.2 Unit: mm 4.5±0.2 16.0±1.0 2.5±0.1 High forward current transfer ratio hFE which has satisfactory linearity. Low collector-emitter saturation voltage VCE(sat) Allowing supply with the radial taping 10.8±0.2 0.65±0.1 0.85±0.1 1.0±0.1 0.8 C 90˚.
