Datasheet Summary
Power Transistors
Silicon NPN triple diffusion planar type
For power amplification plementary to 2SB1416
7.5±0.2
Unit: mm
4.5±0.2
16.0±1.0
2.5±0.1
- High forward current transfer ratio hFE which has satisfactory linearity.
- Low collector-emitter saturation voltage VCE(sat)
- Allowing supply with the radial taping
10.8±0.2
0.65±0.1
0.85±0.1 1.0±0.1 0.8 C
90˚
- Features
3.8±0.2
0.8 C
0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2
-...
