2SD2138A
Overview
- 5±0.2
- 2±0.1 C1.0 2.25±0.2
- 0±0.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1418 2SB1418A 2SB1418 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
- 35±0.1
- 65±0.1 1.05±0.1 0.55±0.1
- 55±0.1 C1.0 1 2 3 emitter voltage 2SB1418A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V
- 5±0.2 2.5±0.2 V A A W ˚C ˚C B 1:Base 2:Collector 3:Emitter MT4 Type Package Internal Connection C E s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB1418 2SB1418A 2SB1418 2SB1418A 2SB1418 2SB1418A (TC=25˚C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VBE VCE(sat) fT ton toff Conditions VCB = -60V, IB = 0 VCB = -80V, IB = 0 VCE = -30V, IB = 0 VCE = -40V, IB = 0 VEB = -5V, IC = 0 IC = -30mA, IB = 0 VCE = -4V, IC = -1A VCE = -4V, IC = -2A VCE = -4V, IC = -2A IC = -2A, IB = -8mA VCE = -10V, IC = - 0.5A, f = 1MHz IC = -2A, IB1 = -8mA, IB2 = 8mA, VCC = -50V 20 0.2 2 -60 -80 1000 2000 10000 -2.8 -2.5 V V MHz µs µs min typ max -100 -100 -100 -100 -100 Unit µA µA µA V Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Turn-off time
- h FE2 Rank classification Q P Rank hFE2 2000 to 5000 4000 to 10000 1 Power Transistors PC - Ta
