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Power Transistors
2SB1418, 2SB1418A
Silicon PNP epitaxial planar type Darlington
For power amplification Complementary to 2SD2138 and 2SD2138A
13.0±0.2 4.2±0.2
Unit: mm
5.0±0.1 10.0±0.2 1.0
s Features
q q q
High foward current transfer ratio hFE High-speed switching Allowing automatic insertion with radial taping (TC=25˚C)
Ratings –60 –80 –60 –80 –5 –4 –2 15 2.0 150 –55 to +150 Unit V
90°
2.5±0.2
1.2±0.1
C1.0 2.25±0.2
18.0±0.5 Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB1418 2SB1418A 2SB1418 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
0.35±0.1
0.65±0.1 1.05±0.1 0.55±0.1
0.55±0.1
C1.
2SD2138A Datasheet
