The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Power Transistors
2SD2138, 2SD2138A
Silicon NPN triple diffusion planar type Darlington
For power amplification Complementary to 2SB1418 and 2SB1418A
5.0±0.1
Unit: mm
13.0±0.2 4.2±0.2
s Features
q q
10.0±0.2
1.0
2.5±0.2
High forward current transfer ratio hFE which has satisfactory linearity Allowing supply with the radial taping
90°
1.2±0.1
18.0±0.5 Solder Dip
s
Absolute Maximum Ratings (TC=25˚C)
Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 60 80 60 80 5 4 2 15 2 150 –55 to +150 Unit V 2SD2138 2SD2138A 2SD2138
C1.0 2.25±0.2
0.35±0.1
0.65±0.1 1.05±0.1 0.55±0.1
Collector to base voltage Collector to
0.55±0.1
C1.
2SD2138 Datasheet
