2SD2225 - Silicon NPN epitaxial planer type Transistor
Panasonic
Key Features
q q q
0.65 max. 1.0 1.0
High collector to emitter voltage VCEO of 120V. Optimum for low-frequency driver amplification. Allowing supply with the radial taping. 0.2
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature.
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Transistor
2SD2225
Silicon NPN epitaxial planer type
For low-frequency amplification Complementary to 2SB1473
6.9±0.1
0.15
Unit: mm
1.05 2.5±0.1 ±0.05 (1.45) 0.8
0.5 4.5±0.1 0.45–0.05 2.5±0.1
0.7
4.0
s Features
q q q
0.65 max.
1.0 1.0
High collector to emitter voltage VCEO of 120V. Optimum for low-frequency driver amplification. Allowing supply with the radial taping.
0.2
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg
Ratings 120 120 5 1 0.
2SD2225 Datasheet
