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Power Transistors
2SD2242, 2SD2242A
Silicon NPN triple diffusion planar type Darlington
For power amplification
Unit: mm
5.0±0.1 10.0±0.2 1.0
s Features
13.0±0.2 4.2±0.2
q q q
2.5±0.2
High foward current transfer ratio hFE High-speed switching Allowing supply with the radial taping (TC=25˚C)
90°
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD2242 2SD2242A 2SD2242 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1.2±0.1
C1.0 2.25±0.2
18.0±0.5 Solder Dip
Ratings 60 80 60 80 5 8 4 15 2 150 –55 to +150
Unit V
0.35±0.1
0.65±0.1 1.05±0.1 0.55±0.1
0.55±0.1
emitter voltage 2SD2242A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V A A W ˚C ˚C
C1.
2SD2242A Datasheet
