Datasheet Summary
Transistor
Silicon NPN epitaxial planer type
For low-frequency power amplification
Unit: mm
1.05 2.5±0.1 ±0.05 6.9±0.1
(1.45) 0.8
0.5 4.5±0.1 s Features q q
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
- Symbol VCBO VCEO VEBO ICP IC PC- Tj Tstg
Ratings 40 20 7 8 5 1 150
- 55 ~ +150 1cm2
Unit V V V A A W ˚C ˚C
0.45- 0.05
+0.1 s...