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Transistor
2SD2249
Silicon NPN epitaxial planer type
For low-frequency power amplification
Unit: mm
1.05 2.5±0.1 ±0.05 6.9±0.1
0.15
(1.45) 0.8
0.5 4.5±0.1
s Features
q q
0.7
4.0
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg
Ratings 40 20 7 8 5 1 150 –55 ~ +150 1cm2
Unit V V V A A W ˚C ˚C
1
2
3
0.45–0.05
+0.1
s Absolute Maximum Ratings
0.45–0.05
+0.1
(Ta=25˚C)
2.5±0.5
2.5±0.5
Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available.
1:Emitter 2:Collector 3:Base MT2 Type Package
1.2±0.1 0.65 max.
0.1 0.45+ – 0.
2SD2249 Datasheet
