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2SD2250 Datasheet Silicon NPN Transistor

Manufacturer: Panasonic

Overview: Power Transistors 2SD2250 Silicon NPN triple diffusion planar type Darlington For power amplification plementary to 2SB1490 φ 3.3±0.2 5.0±0.3 3.0 Unit: mm 20.0±0.

Key Features

  • q q q 6.0 1.5 1.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 20.0±0.5 2.5 2.0±0.3 3.0±0.3 1.0±0.2 (TC=25˚C) Ratings 160 140 5 12 7 90 3.5 150.
  • 55 to +150 Unit V V V A 2.7±0.3 0.6±0.2 5.45±0.3 10.9±0.5 1 2 3 A W ˚C ˚C 1:Base 2:C.

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