2SD2250
Overview
- 5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
- 0±0.5 2.5
- 0±0.3 3.0±0.3 1.0±0.2 (TC=25˚C) Ratings 160 140 5 12 7 90 3.5 150 -55 to +150 Unit V V V A
- 7±0.3
- 6±0.2 5.45±0.3 10.9±0.5 1 2 3 A W ˚C ˚C 1:Base 2:Collector 3:Emitter TOP-3L Package Internal Connection C B E s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
- h (TC=25˚C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 160V, IE = 0 VCE = 140V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 6A IC = 6A, IB = 6mA IC = 6A, IB = 6mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 6A, IB1 = 6mA, IB2 = -6mA, VCC = 50V 20 2.5 5.0 2.5 140 2000 5000 30000 2.5 3.0 V V MHz µs µs µs min typ max 100 100 100 Unit µA µA µA V FE2 Rank classification Q P Rank hFE2 5000 to 15000 8000 to 30000
- 5 Optimum for 80W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <2.5V
- 0±0.5
- 0 1 Power Transistors PC - Ta
