0.65 max. 1.0 1.0
0.2
Unit µA µA V V V
VCE(sat) VBE(sat) fT
V V MHz
Rank classification
Q R S 4000 ~ 10000 8000 ~ 20000 16000 ~ 40000
Pulse measurement
Rank hFE
1
Transistor
PC.
Ta
Collector to emitter saturation voltage VCE(sat) (V)
1.2
2SD2258
VCE(sat).
IC
10 IC/IB=1000
VBE(sat).
IC
Base to emitter saturation voltage VBE(sat) (V)
10 IC/IB=1000
Collector power dissipation PC (W)
1.0
Printed circut board: Copper foil area of 1cm2 or more, and the board.
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Transistor
2SD2258 (Tentative)
Silicon NPN epitaxial planer type
6.9±0.1
0.15
Unit: mm
1.05 2.5±0.1 ±0.05 (1.45) 0.8
0.5 4.5±0.1 0.45–0.05 2.5±0.1
For low-frequency output amplification
0.7
4.0
q q q
Darlington connection. High foward current transfer ratio hFE. Allowing supply with the radial taping.
0.45–0.05
+0.1
+0.1
2.5±0.5 1 2
2.5±0.5 3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
(Ta=25˚C)
Ratings 60 50 5 1.5 1 1 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C
0.1 0.45+ – 0.
2SD2258 Datasheet
