0.05
+0.1
I Absolute Maximum Ratings Ta = 25°C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation.
Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC.
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Transistors
2SD2358
Silicon NPN epitaxial planer type
Unit: mm
For low-frequency output amplification Complementary to 2SB1538 I Features
• Low collector to emitter saturation voltage VCE(sat): < 0.15 V • Allowing supply with the radial taping
6.9±0.1
1.05 2.5±0.1 ±0.05
(1.45) 0.8
0.15
0.7
4.0
0.65 max.
1.0 1.0
0.2
0.45−0.05
+0.1
I Absolute Maximum Ratings Ta = 25°C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation * Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating 10 10 5 1.2 1 1 150 −55 to +150 Unit V V V A A W °C °C
1
2
3
0.45−0.05
+0.1
2.5±0.5
2.5±0.
2SD2358 Datasheet