Click to expand full text
Power Transistors
2SD2469, 2SD2469A
Silicon NPN epitaxial planar type
For power switching Complementary to 2SB1607
Unit: mm
4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2
s Features
q q q q
4.1±0.2 8.0±0.2 Solder Dip
Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 130 150 80 100 7 15 7 40 2 150 –55 to +150 Unit V
15.0±0.3
3.0±0.2
Parameter Collector to base voltage Collector to 2SD2469 2SD2469A 2SD2469
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
13.7–0.2
+0.5
s Absolute Maximum Ratings
1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4
2.6±0.1 0.7±0.
2SD2469 Datasheet
