• Part: 2SD662
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Panasonic
  • Size: 99.39 KB
Download 2SD662 Datasheet PDF
Panasonic
2SD662
Features (1.5) R 0.9 R 0.7 - Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SD0662 2SD0662B VCEO VEBO IC PC Tj Tstg Symbol VCBO Rating 250 400 200 400 5 70 600 150 - 55 to +150 V m A m W °C °C V Unit V 1.0±0.1 (0.85) Collector-emitter voltage 2SD0662 (Base open) 2SD0662B Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature 3 (2.5) 2 (2.5) 1.25±0.05 0.55±0.1 1: Base 2: Collector 3: Emitter M-A1 Package - Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) 2SD0662 2SD0662B VEBO ICEO h FE - VCE(sat) f T Cob IE = 10 µA, IC = 0 VCE = 100 V, IB = 0 VCE = 10 V, IC = 5 m A IC = 50 m A, IB = 5 m A VCB = 10 V, IE = - 10 m A, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 50 10 30 Symbol VCEO Conditions IC = 100 µA, IB = 0 Min 200 400 5 2 220 1.2 V µA  V MHz p F Typ Max Unit V Emitter-base voltage (Collector open) Collector-emitter cutoff current (Base...