2SD661A
Key Features
- 5 R0.9 R0.9
- 0±0.1 R 0. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB745 2SB745A 2SB745 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
- 55±0.1
- 25±0.05
- 45±0.05 Ratings -35 -55 -35 -55 -5 -200 -50 400 150 -55 ~ +150 Unit V 3 2 1 emitter voltage 2SB745A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW ˚C ˚C 1:Base 2:Collector 3:Emitter
- 5 EIAJ:SC-71 M Type Mold Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SB745 2SB745A 2SB745 2SB745A (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE * Conditions VCB = -10V, IE = 0 VCE = -10V, IB = 0 IC = -10µA, IE = 0 IC = -2mA, IB = 0 IE = -10µA, IC = 0 VCB = -5V, IE = 2mA IC = -100mA, IB = -10mA VCE = -1V, IC = -100mA VCB = -5V, IE = 2mA, f = 200MHz VCE = -10V, IC = -1mA, GV = 80dB Rg = 100kΩ, Function = FLAT min typ max -100 -1
- 1±0.2
- 5±0.1 7 Unit nA µA V -35 -55 -35 -55 -5 180 700 - 0.6 - 0.7 150 150 -1 V V Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise voltage
- h VCE(sat) VBE fT NV V V MHz mV FE Rank classification R 180 ~ 360 S 260 ~ 520 T 360 ~ 700 hFE Rank 1 Transistor PC - Ta
