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2SD661A - Silicon PNP Transistor

Key Features

  • 1.5 1.5 R0.9 R0.9 1.0±0.1 R 0. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB745 2SB745A 2SB745 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 0.85 0.55±0.1 1.25±0.05 0.45±0.05 Ratings.
  • 35.
  • 55.
  • 35.
  • 55.
  • 5.
  • 200.
  • 50 400 150.
  • 55 ~ +150 Unit V 3 2 1 emitter voltage 2SB745A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage tempera.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistor 2SB745, 2SB745A Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SD661 and 2SD661A Unit: mm 6.9±0.1 0.4 q q q 2.4±0.2 2.0±0.2 3.5±0.1 Low noise voltage NV. High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (Ta=25˚C) 1.0 s 2.5±0.1 1.0 Features 1.5 1.5 R0.9 R0.9 1.0±0.1 R 0. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB745 2SB745A 2SB745 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 0.85 0.55±0.1 1.25±0.05 0.45±0.