Datasheet Summary
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Transistors
2SD0662, 2SD0662B (2SD662, 2SD662B)
Silicon NPN epitaxial planar type
For high breakdown voltage general amplification
6.9±0.1 2.5±0.1 (1.0)
Unit: mm
(0.4)
(1.5)
2.0±0.2
- High collector-emitter voltage (Base open) VCEO
- High transition frequency fT
- M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
3.5±0.1
(1.0) 2.4±0.2
0.45±0.05 1
- Features
(1.5)
R 0.9 R 0.7
-...