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2SD662B - Silicon NPN Transistor

Download the 2SD662B datasheet PDF. This datasheet also covers the 2SD0662 variant, as both devices belong to the same silicon npn transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 5) R 0.9 R 0.7.
  • Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SD0662 2SD0662B VCEO VEBO IC PC Tj Tstg Symbol VCBO Rating 250 400 200 400 5 70 600 150.
  • 55 to +150 V mA mW °C °C V Unit V 1.0±0.1 (0.85) Collector-emitter voltage 2SD0662 (Base open) 2SD0662B Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature 3 (2.5) 2 (2.5) 1.25±0.05 0.55±0.1 1: Base 2: Collector 3:.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SD0662_PanasonicSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.net Transistors 2SD0662, 2SD0662B (2SD662, 2SD662B) Silicon NPN epitaxial planar type For high breakdown voltage general amplification 6.9±0.1 2.5±0.1 (1.0) Unit: mm (0.4) (1.5) 2.0±0.2 • High collector-emitter voltage (Base open) VCEO • High transition frequency fT • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 3.5±0.1 (1.0) 2.4±0.2 0.45±0.05 1 ■ Features (1.5) R 0.9 R 0.7 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SD0662 2SD0662B VCEO VEBO IC PC Tj Tstg Symbol VCBO Rating 250 400 200 400 5 70 600 150 −55 to +150 V mA mW °C °C V Unit V 1.0±0.1 (0.