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Transistor
2SD662, 2SD662B
Silicon NPN epitaxial planer type
For high breakdown voltage general amplification
Unit: mm
6.9±0.1 1.5 2.5±0.1 1.0
1.0 2.4±0.2 2.0±0.2 3.5±0.1
s Features
q q q
1.5 R0.9 R0.9
0.85
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD662 2SD662B 2SD662 VCEO VEBO ICP IC PC Tj Tstg Symbol VCBO
(Ta=25˚C)
Ratings 250 400 200 400 5 100 70 600 150 –55 ~ +150 Unit
3
0.55±0.1
1.25±0.05
0.45±0.05
2
1
V
2.5 2.
2SD662 Datasheet
