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Silicon Junction FETs (Small Signal)
2SK0198 (2SK198)
Silicon N-Channel Junction FET
For low-frequency amplification
0.40+0.10 –0.05
Unit: mm
0.16+0.10 –0.06
s Features
q High mutual conductance gm q Low noise type q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
3
1.50+0.25 –0.05
2.8+0.2 –0.3
1
2
(0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10˚
1.1+0.2 –0.1
Drain to Source voltage Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature
VDSX VGDO ID IG PD Tch Tstg
30 −30 20 10 150 150 −55 to +150
V V mA mA mW °C °C
1: Source 2: Drain 3: Gate
0 to 0.1
Parameter
Symbol
Ratings
Unit
1.1+0.3 –0.1
s Absolute Maximum Ratings (Ta = 25°C)
(0.
2SK0198 Datasheet
