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2SK0301 - Silicon N-Channel Junction FET

Datasheet Summary

Features

  • 13.5±0.5 G Low noies, high gain G High gate to drain voltage VGDO 0.45.
  • 0.1 +0.2 0.45.
  • 0.1 +0.2 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Drain voltage Gate to Source voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature Symbol VDSX VGDO VGSO ID IG PD Tj Tstg Ratings 55.
  • 55.
  • 55 ±30 10 250 125.
  • 55 to +125 Unit V V V mA mA mW °C °C 1.27 1.27 1 2 3 2.54±0.15 I.

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Datasheet Details

Part number 2SK0301
Manufacturer Panasonic Semiconductor
File Size 74.18 KB
Description Silicon N-Channel Junction FET
Datasheet download datasheet 2SK0301 Datasheet
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Silicon Junction FETs (Small Signal) 2SK0301 (2SK301) Silicon N-Channel Junction FET For low-frequency amplification For switching 5.0±0.2 5.1±0.2 4.0±0.2 unit: mm I Features 13.5±0.5 G Low noies, high gain G High gate to drain voltage VGDO 0.45 –0.1 +0.2 0.45 –0.1 +0.2 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Drain voltage Gate to Source voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature Symbol VDSX VGDO VGSO ID IG PD Tj Tstg Ratings 55 −55 −55 ±30 10 250 125 −55 to +125 Unit V V V mA mA mW °C °C 1.27 1.27 1 2 3 2.54±0.
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