Absolute Maximum Ratings Ta = 25°C
Parameter Drain-source voltage (Gate open) Drain-gate voltage (Souse open) Drain-source current (Gate open) Drain-gate current (Souse open) Gate-source cutoff current (Drain open) Power dissipation Operating ambient temperature Storage temperature Symbol VDSO VDGO IDSO IDGO IGSO PD Topr Tstg Ratin.
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Silicon Junction FETs (Small Signal)
2SK1860
Silicon N-Channel Junction FET
Unit: mm
For impedance conversion in low frequency For electret capacitor microphone ■ Features
• High mutual conductance gm • Low noise voltage of NV
1
+0.10 0.40 –0.05
0.12 –0.01
+0.02
3
1.5±0.2
2.1±0.1 5.8±0.2
2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Drain-source voltage (Gate open) Drain-gate voltage (Souse open) Drain-source current (Gate open) Drain-gate current (Souse open) Gate-source cutoff current (Drain open) Power dissipation Operating ambient temperature Storage temperature Symbol VDSO VDGO IDSO IDGO IGSO PD Topr Tstg Rating 20 20 2 2 2 200 −20 to +80 −55 to +150 Unit
10˚
(0.95)
(0.95)
2.20±0.15
5˚
(0.5)
1.9±0.1 2.9±0.2
V V mA mA mA mW °C °C
0.7±0.
2SK1860 Datasheet
