Datasheet4U Logo Datasheet4U.com

2SK3037 - Silicon N-Channel Power F-MOS FET

Datasheet Summary

Features

  • q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 7.3±0.1 1.8±0.1 unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 2.3±0.1 0.5±0.1 s.

📥 Download Datasheet

Datasheet preview – 2SK3037

Datasheet Details

Part number 2SK3037
Manufacturer Panasonic Semiconductor
File Size 24.02 KB
Description Silicon N-Channel Power F-MOS FET
Datasheet download datasheet 2SK3037 Datasheet
Additional preview pages of the 2SK3037 datasheet.

📁 Similar Datasheet

  • 2SK303 - N-Channel MOSFET (Sanyo Semicon Device)
  • 2SK303 - JFET (UTC)
  • 2SK303 - N-Channel FET (Kexin)
  • 2SK300 - N-Channel Silicon MOSFET (Sony Corporation)
  • 2SK3000 - Silicon N Channel MOS FET (Hitachi Semiconductor)
  • 2SK3000 - Silicon N Channel MOS FET (Renesas Technology)
  • 2SK3001 - GaAs HEMT Low Noise Amplifier (Hitachi Semiconductor)
  • 2SK3003 - MOSFET (Sanken)
  • 2SK3003 - N-Channel MOSFET (INCHANGE)
  • 2SK3004 - MOSFET (ETC)
Other Datasheets by Panasonic Semiconductor
  • 2SK3030 - Silicon N-Channel Power F-MOS FET
  • 2SK3031 - Silicon N-channel power MOSFET
  • 2SK3032 - Silicon N-Channel Power F-MOS FET
  • 2SK3033 - Silicon N-Channel Power F-MOS FET
  • 2SK3034 - Silicon N-Channel Power F-MOS FET
  • 2SK3035 - Silicon N-Channel Power F-MOS FET
  • 2SK3036 - Silicon N-Channel Power F-MOS FET
  • 2SK301 - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
Power F-MOS FETs 2SK3037 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 7.3±0.1 1.8±0.1 unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 2.3±0.1 0.5±0.1 s Applications 2.5±0.1 0.8max 0.93±0.1 1.0±0.1 0.1±0.05 0.5±0.1 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 150 ±20 ±10 ±20 5 20 1 150 −55 to +150 Unit V V A A mJ 1 2 0.75±0.1 2.3±0.1 4.6±0.
Published: |