Datasheet Summary
Silicon Junction FETs (Small Signal)
Silicon N-Channel Junction FET
Unit: mm
For impedance conversion in low frequency For infrared sensor
- Features
- Low gate-source cutoff current IGSS
- Small capacitance of short-circuit forward transfer capacitance (mon source) Ciss , short-circuit output capacitance (mon source) Coss , reverse transfer capacitance (mon source) Crss
0.33+0.05
- 0.02 3
0.10+0.05
- 0.02
(0.40) (0.40) 0.80±0.05 1.20±0.05 5°
0.15 min.
0.23+0.05
- 0.02
0 to 0.01
Parameter Gate-drain voltage (Source open) Gate-source voltage (Drain open) Gate current Drain current Power dissipation Channel temperature Storage temperature
Symbol VGDO VGSO IG ID...