2SK3396 Overview
Silicon Junction FETs (Small Signal) 2SK3396 Silicon N-Channel Junction FET Unit: mm For impedance conversion in low frequency For infrared sensor.
2SK3396 Key Features
- Low gate-source cutoff current IGSS
- Small capacitance of short-circuit forward transfer capacitance (mon source) Ciss , short-circuit output capacitance (mo
- Electrical Characteristics Ta = 25°C ± 3°C
- 0.5 Typ Max Unit V µA nA mS V pF pF pF