CNA1006N Datasheet | Panasonic

Overview CNA1006N is a transmissive photosensor in which a high efficiency Ga As infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other, and objects passing between them are detected. 1.5 16.6 11.8 3.0+0.2 - 0.3 A Optical center (3.8) 1.6 6.0 1.5 Features Highly precise position detection : 0.3 mm Gap width : 3 mm The type direetly attached to PCB (with positioning pins and fixing hooks) A' 4-0.45 (7.6) 15.0 12.6±0.3 2 3 3.5±0.5 2-1.5 2-ø1.0 +0 - 0.05 2.0±0.1 2.0±0.1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Reverse voltage (DC) Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Symbol Ratings VR IF PD- 1 IC 3 50 75 20 30 5 100 - 30 to +100 Unit V m A m W m A V V m W ˚C ˚C 1 4 1: Anode 3: Collecter 2: Cathode 4: Emitter (Note) 1. Tolerance unless otherwise specified is ±0.2 2. ( ) Dimension is reference 3. Fitting strength is 2N min. (Static load) - 1 Output (Photo Collector to emitter voltage VCEO transistor) Emitter to collector voltage VECO Collector power dissipation Temperature Operating ambient temperature Storage temperature PC - 2 Input power derating ratio is 1.0 m W/˚C at Ta ≥ 25˚C. - 2 Output power derating ratio is 1.33 m W/˚C at Ta ≥ 25˚C. Topr - 25 to +85 Tstg Electrical Characteristics (Ta = 25˚C) Parameter Forward voltage (DC) Input characteristics Reverse current (DC) Output characteristics Collector cutoff current Symbol VF IR ICEO VR = 3V VCE = 10V 0.7 5 10 Conditions IF = 20m A min typ 1.25 max 1.4 10 200 14 0.4 Unit V µA n A m A V µs Collector current IC VCE = 5V, IF = 20m A Transfer Collector to emitter saturation voltage V IF = 40m A, IC = 1m A CE(sat) characteristics - Response time tr , tf VCC = 5V, IC = 1m A, RL = 100Ω - Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf ,, ,, 50Ω RL td :...