CNA1007H Datasheet | Panasonic

Overview CNA1007H is a transmissive photosensor in which a high efficiency Ga As infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other, and objects passing between them are detected. (3.2) 14.0 5.0±0.15 A 6.0 5.0 1.5±0.15 Device Center (C1) 3.5±0.5 10.0 2.5 1.3 A' (10.0) 1.8 3 (4-0.45) Features Position detection accuracy : 0.3 mm Gap width : 5 mm Horizontal slit type The type directly attached to PCB ( with a positioning pins) +0 φ1.2 - 0.1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Reverse voltage (DC) Symbol Ratings VR IF PD- 1 IC 5 50 75 20 30 5 100 - 40 to +100 Unit V m A m W m A V V m W ˚C ˚C Internal connector 2 3 1 Pin connection Output (Photo Collector to emitter voltage VCEO transistor) Emitter to collector voltage VECO Collector power dissipation Temperature - 1 PC- 2 Tstg Operating ambient temperature Storage temperature Topr - 25 to +85 Input power derating ratio is 1.0 m W/˚C at Ta = 25˚C. - 2 Output power derating ratio is 1.33 m W/˚C at Ta = 25˚C. Electrical Characteristics (Ta = 25˚C) Parameter Input characteristics Reverse current (DC) Forward voltage (DC) Symbol VF IR ICEO VR = 3V VCE = 10V 0.5 5 Conditions IF = 20m A min typ 1.25 max 1.4 10 200 14 0.4 Unit V µA n A m A V µs Output characteristics Collector cutoff current Collector current IC VCE = 5V, IF = 20m A Transfer Collector to emitter saturation voltage V CE(sat) IF = 40m A, IC = 1m A characteristics Response time tr , tf- VCC = 5V, IC = 1m A, RL = 100Ω - Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% tr tf tr : Rise time (Time required for the collector current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector current to decrease from 90% to 10% of...