CNA1014H Datasheet | Panasonic

Overview CNA1014H is a transmittive photosensor series in which a high efficiency Ga As infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other, and objects passing between them are detected. 12.0 3.0±0.1 A Device Center 5.0 0.5±0.1 (C1) Unit: mm .. 0.45±0.1 (2.95) 4.15±0.1 6.4±0.5 (4.5) - Features - Highly precise position detection: 0.3 mm - With attachment positioning boss - Fast response: tr , tf = 5 µs (typ.) A' 30° (7.6) 2 3 4-0.45±0.15 (2.54) SEC. A-A' 4-0.45±0.15 - Adsolute Maximum Ratings Ta = 25°C Parameter Input (Light Reverse voltage Power dissipation - 1 Output (Photo Collector-emitter voltage transistor) (Base open) Emitter-collector voltage (Base open) Collector current Collector power dissipation - 2 Temperature Operating ambient temperature Storage temperature emitting diode) Forward current Symbol VR IF PD VCEO VECO IC PC Topr Tstg Rating 3 50 75 30 5 20 100 - 25 to +85 - 40 to +100 Unit V m A m W V V m A m W °C °C 1: Anode 2: Cathode 3: Collector 4: Emitter PISTR104-025 Package (Note) 1. Tolerance unless otherwise specified is ±0.3 2. ( ) Dimension is reference φ1.5±0.05 (φ2) 4 Note) - 1: Input power derating ratio is 1.0 m W/°C at Ta ≥ 25°C. - 2: Output power derating ratio is 1.33 m W/°C at Ta ≥ 25°C. - Electrical-Optical Characteristics Ta = 25°C ± 3°C Parameter Input Forward voltage characteristics Reverse current Output Collector-emitter cutoff current characteristics (Base open) Transfer Collector current Rise time - Fall time - Symbol VF IR ICEO IC tr tf IF = 20 m A VR = 3 V VCE = 10 V VCE = 5 V, IF = 20 m A IF = 40 m A, IC = 1 m A VCC = 5 V, IC = 1 m A RL = 100 Ω 5 5 1.5 10 Conditions Min Typ 1.25 Max 1.40 10 200 12.0 0.4 Unit V µA n A m A V µs µs characteristics Collector-emitter saturation voltage VCE(sat) Note) 1. Input and output are practiced by electricity. 2. This device...