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D1985 - 2SD1985

Key Features

  • q High forward current transfer ratio hFE which has satisfactory linearity q Low collector to emitter saturation voltage VCE(sat) q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit 16.7±0.3 7.5±0.2 0.7±0.1 10.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 14.0±0.5 Solder Dip 4.0 Collector to 2SD1985 base voltage 2SD1985A VCBO 60 80 V 1.3±0.2 1.4±0.1 Collector to 2SD1985 emitter v.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistors 2SD1985, 2SD1985A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1393 and 2SB1393A s Features q High forward current transfer ratio hFE which has satisfactory linearity q Low collector to emitter saturation voltage VCE(sat) q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit 16.7±0.3 7.5±0.2 0.7±0.1 10.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 14.0±0.5 Solder Dip 4.0 Collector to 2SD1985 base voltage 2SD1985A VCBO 60 80 V 1.3±0.2 1.4±0.1 Collector to 2SD1985 emitter voltage 2SD1985A VCEO 60 80 V 0.8±0.1 0.5 +0.2 –0.