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GN01100B - GaAs MMIC

Features

  • 2.1±0.1 0.1 For the preamplifier of the transmitting section in a cellular phone Other communication equipment 0.2±0.05 0.12 +0.05.
  • 0.02 4 6 5 1 GN01100B s Measurement Circuit VREF VDD2 GaAs MMIC 10 nF 33 pF 33 pF 39 nH 5Ω Out 5 6 1 2 3 4 240 Ω 100 pF RFIN 33 pF 4.7 kΩ 10 nF 2 kΩ 10 nH 10 nF 33 nF 10 nF VAGC 2 pF VDD1 2.

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Datasheet Details

Part number GN01100B
Manufacturer Panasonic
File Size 30.52 KB
Description GaAs MMIC
Datasheet download datasheet GN01100B Datasheet
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GaAs MMIC GN01100B GaAs IC (with built-in ferroelectric) Unit: mm 0.425 1.25±0.1 • Super miniature S-Mini 6-pin package (2125 size) • Transmitter amplifier : Wide dynamic range on low operation current : Gain control function built-in R0.2 1 0.65 2 0.65 3 0.425 2.0±0.1 0.2 6 - 0° to 10° Parameter Power supply voltage Circuit current Gate control voltage Max input power Allowable power dissipation Operating ambient temperature Storage temperature Symbol VDD IDD VAGC PIN PD Topr T stg Ratings 5 80 0 to 3 −5 150 − 30 to + 90 −40 to + 120 Unit V mA V dBm mW °C °C EIAJ : SC-88 0 to 0.1 1 : RFIN 4 : VDD2 2 : V DD1 5 : GND 3 : VAGC 6 : VREF S Mini Type Package (6-pin) Marking Symbol : HU s Electrical Characteristics VDD1=VDD2=3.
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